Few-electron semiconductor quantum dots with Gaussian confinement

 

Autores
Gomez, Sergio Santiago; Romero, Rodolfo Horacio
Tipo de recurso
artículo
Estado
Versión publicada
Año de publicación
2009
País
Argentina
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
Repositorio
CONICET Digital (CONICET)
Descripción
We have performed Hartree-Fock calculations of the electronic structure of N ≤ 10 electrons in a quantum dot modeled with a confining Gaussian potential well. We discuss the conditions for the stability of N bound electrons in the system. We show that the most relevant parameter determining the number of bound electrons is V 0 R 2. Such a feature arises from widely valid scaling properties of the confining potential. Gaussian Quantum dots having N = 2, 5, and 8 electrons are particularly stable in agreement with the Hund rule. The shell structure becomes less and less noticeable as the well radius increases.
Idioma
inglés
OAI Identifier
oai:ri.conicet.gov.ar:11336/24793
Enlace del recurso
http://hdl.handle.net/11336/24793
Nivel de acceso
Acceso abierto
Materia
QUANTUM DOT
GAUSSIAN POTENTIAL
ELECTRONIC STRUCTURE
Otras Ciencias Físicas
Ciencias Físicas
CIENCIAS NATURALES Y EXACTAS