A fully integrated, power-efficient, 0.07–2.08 mA, high-voltage neural stimulator in a standard CMOS process
This article belongs to the Special Issue Electrical Stimulation and Methods to Manipulate the Motor and Sensory System: Current Settings and Applications II.
| Authors: | , , |
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| Format: | article |
| Status: | Published version |
| Publication Date: | 2022 |
| Country: | España |
| Institution: | Consejo Superior de Investigaciones Científicas (CSIC) |
| Repository: | DIGITAL.CSIC. Repositorio Institucional del CSIC |
| OAI Identifier: | oai:digital.csic.es:10261/336818 |
| Online Access: | http://hdl.handle.net/10261/336818 |
| Access Level: | Open access |
| Keyword: | Neural stimulator Dynamic gate biasing Neuromodulation Stacked transistors Neural implants CMOS High voltage compliance Charge pump DC-DC converter |
| Summary: | This article belongs to the Special Issue Electrical Stimulation and Methods to Manipulate the Motor and Sensory System: Current Settings and Applications II. |
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