Growth of non-polar m-plane GaN pseudo-substrates by Molecular beam epitaxy

Detalles Bibliográficos
Autores: Fernando Saavedra, Amalia Luisa|||0000-0002-5716-2591, Albert, Steven, Bengoechea Encabo, Ana, Trampert, Achim, Xie, Mengyao, Sánchez García, Miguel Ángel|||0000-0002-1494-9351, Calleja Pardo, Enrique|||0000-0002-3686-8982
Tipo de recurso: artículo
Fecha de publicación:2023
País:España
Institución:Universidad Politécnica de Madrid
Repositorio:Archivo Digital UPM
OAI Identifier:oai:oa.upm.es:85781
Acceso en línea:https://oa.upm.es/85781/
Access Level:acceso abierto
Palabra clave:A1.Etching A3.Molecular beam epitaxy A3.Selective epitaxy B1.Nitrides B2.Semiconducting III-V materials
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spelling Growth of non-polar m-plane GaN pseudo-substrates by Molecular beam epitaxy Fernando Saavedra, Amalia Luisa|||0000-0002-5716-2591 Albert, Steven Bengoechea Encabo, Ana Trampert, Achim Xie, Mengyao Sánchez García, Miguel Ángel|||0000-0002-1494-9351 Calleja Pardo, Enrique|||0000-0002-3686-8982 A1.Etching A3.Molecular beam epitaxy A3.Selective epitaxy B1.Nitrides B2.Semiconducting III-V materials https://oa.upm.es/85781/
title Growth of non-polar m-plane GaN pseudo-substrates by Molecular beam epitaxy
spellingShingle Growth of non-polar m-plane GaN pseudo-substrates by Molecular beam epitaxy
Fernando Saavedra, Amalia Luisa|||0000-0002-5716-2591
A1.Etching A3.Molecular beam epitaxy A3.Selective epitaxy B1.Nitrides B2.Semiconducting III-V materials
title_short Growth of non-polar m-plane GaN pseudo-substrates by Molecular beam epitaxy
title_full Growth of non-polar m-plane GaN pseudo-substrates by Molecular beam epitaxy
title_fullStr Growth of non-polar m-plane GaN pseudo-substrates by Molecular beam epitaxy
title_full_unstemmed Growth of non-polar m-plane GaN pseudo-substrates by Molecular beam epitaxy
title_sort Growth of non-polar m-plane GaN pseudo-substrates by Molecular beam epitaxy
author Fernando Saavedra, Amalia Luisa|||0000-0002-5716-2591
author_facet Fernando Saavedra, Amalia Luisa|||0000-0002-5716-2591
Albert, Steven
Bengoechea Encabo, Ana
Trampert, Achim
Xie, Mengyao
Sánchez García, Miguel Ángel|||0000-0002-1494-9351
Calleja Pardo, Enrique|||0000-0002-3686-8982
author_role author
author2 Albert, Steven
Bengoechea Encabo, Ana
Trampert, Achim
Xie, Mengyao
Sánchez García, Miguel Ángel|||0000-0002-1494-9351
Calleja Pardo, Enrique|||0000-0002-3686-8982
author2_role author
author
author
author
author
author
topic A1.Etching A3.Molecular beam epitaxy A3.Selective epitaxy B1.Nitrides B2.Semiconducting III-V materials
topic_facet A1.Etching A3.Molecular beam epitaxy A3.Selective epitaxy B1.Nitrides B2.Semiconducting III-V materials
publishDate 2023
format article
url https://oa.upm.es/85781/
eu_rights_str_mv openAccess
institution Universidad Politécnica de Madrid
collection Archivo Digital UPM
reponame_str Archivo Digital UPM
instname_str Universidad Politécnica de Madrid
_version_ 1878732051568394240
publishDateSort 2023
author_browse Albert, Steven
Bengoechea Encabo, Ana
Calleja Pardo, Enrique|||0000-0002-3686-8982
Fernando Saavedra, Amalia Luisa|||0000-0002-5716-2591
Sánchez García, Miguel Ángel|||0000-0002-1494-9351
Trampert, Achim
Xie, Mengyao
score 6,8972664