Positive Effect of Parasitic Monoclinic Phase of Hf0.5Zr0.5O2 on Ferroelectric Endurance

Endurance of ferroelectric HfO2 needs to be enhanced for its use in commercial memories. This work investigates fatigue in epitaxial Hf0.5Zr0.5O2 (HZO) instead of polycrystalline samples. Using different substrates, the relative amount of orthorhombic (ferroelectric) and monoclinic (paraelectric) ph...

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Autores: Song, Tingfeng, Estandía, Saúl, Tan, Huan, Dix, Nico, Gázquez, Jaume, Fina, Ignasi, Sánchez Barrera, Florencio
Tipo de recurso: artículo
Estado:Versión publicada
Fecha de publicación:2021
País:España
Institución:Consejo Superior de Investigaciones Científicas (CSIC)
Repositorio:DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:oai:digital.csic.es:10261/250859
Acceso en línea:http://hdl.handle.net/10261/250859
Access Level:acceso abierto
Palabra clave:Epitaxial oxide
Ferroelectric endurance
Ferroelectric hafnium oxide
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spelling Positive Effect of Parasitic Monoclinic Phase of Hf0.5Zr0.5O2 on Ferroelectric Endurance Song, Tingfeng Estandía, Saúl Tan, Huan Dix, Nico Gázquez, Jaume Fina, Ignasi Sánchez Barrera, Florencio Epitaxial oxide Ferroelectric endurance Ferroelectric hafnium oxide Endurance of ferroelectric HfO2 needs to be enhanced for its use in commercial memories. This work investigates fatigue in epitaxial Hf0.5Zr0.5O2 (HZO) instead of polycrystalline samples. Using different substrates, the relative amount of orthorhombic (ferroelectric) and monoclinic (paraelectric) phases is controlled. Epitaxial HZO films almost free of parasitic monoclinic phase suffer severe fatigue. In contrast, fatigue is mitigated in films with a greater amount of paraelectric phase. This suggests that fatigue can be intrinsically pronounced in ferroelectric HZO. It is argued that the enhancement of endurance in films showing coexisting phases results from the suppression of pinned domain propagation at ferroelectric–paraelectric grain boundaries, in contrast with a rapid increase of the size of the pinned domains in single ferroelectric regions. Financial support from the Spanish Ministry of Science and Innovation, through the Severo Ochoa FUNFUTURE (CEX2019-000917-S) and the MAT2017-85232-R (AEI/FEDER, EU), PID2020-112548RB-I00 (AEI/FEDER, EU), and PID2019-107727RB-I00 (AEI/FEDER, EU) projects, from Generalitat de Catalunya (2017 SGR 1377), and from CSIC through the i-LINK (LINKA20338) program is acknowledged. I.F. and J.G. acknowledge Ramón y Cajal contracts RYC-2017-22531 and RYC-2012-11709, respectively. The project was supported by a 2020 Leonardo Grant for Researchers and Cultural Creators, BBVA Foundation. T.S. and H.T. were financially supported by China Scholarship Council (CSC) with Nos. 201807000104 and 201906050014, respectively. S.E. acknowledges the Spanish Ministry of Economy, Competitiveness and Universities for his Ph.D. contract (SEV-2015-0496-16-3) and its cofunding by the ESF. T.S., S.E., and HT works have been carried out as a part of their Ph.D. program in Materials Science at Universitat Autònoma de Barcelona. Peer reviewed Wiley-VCH http://hdl.handle.net/10261/250859
title Positive Effect of Parasitic Monoclinic Phase of Hf0.5Zr0.5O2 on Ferroelectric Endurance
spellingShingle Positive Effect of Parasitic Monoclinic Phase of Hf0.5Zr0.5O2 on Ferroelectric Endurance
Song, Tingfeng
Epitaxial oxide
Ferroelectric endurance
Ferroelectric hafnium oxide
title_short Positive Effect of Parasitic Monoclinic Phase of Hf0.5Zr0.5O2 on Ferroelectric Endurance
title_full Positive Effect of Parasitic Monoclinic Phase of Hf0.5Zr0.5O2 on Ferroelectric Endurance
title_fullStr Positive Effect of Parasitic Monoclinic Phase of Hf0.5Zr0.5O2 on Ferroelectric Endurance
title_full_unstemmed Positive Effect of Parasitic Monoclinic Phase of Hf0.5Zr0.5O2 on Ferroelectric Endurance
title_sort Positive Effect of Parasitic Monoclinic Phase of Hf0.5Zr0.5O2 on Ferroelectric Endurance
author Song, Tingfeng
author_facet Song, Tingfeng
Estandía, Saúl
Tan, Huan
Dix, Nico
Gázquez, Jaume
Fina, Ignasi
Sánchez Barrera, Florencio
author_role author
author2 Estandía, Saúl
Tan, Huan
Dix, Nico
Gázquez, Jaume
Fina, Ignasi
Sánchez Barrera, Florencio
author2_role author
author
author
author
author
author
topic Epitaxial oxide
Ferroelectric endurance
Ferroelectric hafnium oxide
topic_facet Epitaxial oxide
Ferroelectric endurance
Ferroelectric hafnium oxide
description Endurance of ferroelectric HfO2 needs to be enhanced for its use in commercial memories. This work investigates fatigue in epitaxial Hf0.5Zr0.5O2 (HZO) instead of polycrystalline samples. Using different substrates, the relative amount of orthorhombic (ferroelectric) and monoclinic (paraelectric) phases is controlled. Epitaxial HZO films almost free of parasitic monoclinic phase suffer severe fatigue. In contrast, fatigue is mitigated in films with a greater amount of paraelectric phase. This suggests that fatigue can be intrinsically pronounced in ferroelectric HZO. It is argued that the enhancement of endurance in films showing coexisting phases results from the suppression of pinned domain propagation at ferroelectric–paraelectric grain boundaries, in contrast with a rapid increase of the size of the pinned domains in single ferroelectric regions.
publishDate 2021
format article
status_str publishedVersion
url http://hdl.handle.net/10261/250859
eu_rights_str_mv openAccess
publisher Wiley-VCH
institution Consejo Superior de Investigaciones Científicas (CSIC)
collection DIGITAL.CSIC. Repositorio Institucional del CSIC
reponame_str DIGITAL.CSIC. Repositorio Institucional del CSIC
instname_str Consejo Superior de Investigaciones Científicas (CSIC)
_version_ 1878435098814054400
publishDateSort 2021
author_browse Dix, Nico
Estandía, Saúl
Fina, Ignasi
Gázquez, Jaume
Song, Tingfeng
Sánchez Barrera, Florencio
Tan, Huan
publisherStr Wiley-VCH
score 6,9303427

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