CMOS-NEMS Copper Switches Monolithically Integrated Using a 65 nm CMOS Technology
This work demonstrates the feasibility to obtain copper nanoelectromechanical (NEMS) relays using a commercial complementary metal oxide semiconductor (CMOS) technology (ST 65 nm) following an intra CMOS-MEMS approach. We report experimental demonstration of contact-mode nano-electromechanical switc...
| Authors: | , , |
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| Format: | article |
| Publication Date: | 2016 |
| Country: | España |
| Institution: | Universitat Autònoma de Barcelona |
| Repository: | Dipòsit Digital de Documents de la UAB |
| Language: | English |
| OAI Identifier: | oai:ddd.uab.cat:167678 |
| Online Access: | https://ddd.uab.cat/record/167678 https://dx.doi.org/urn:doi:10.3390/mi7020030 |
| Access Level: | Open access |
| Keyword: | CMOS-NEMS NEMS NEMS switch Copper switch |
| Summary: | This work demonstrates the feasibility to obtain copper nanoelectromechanical (NEMS) relays using a commercial complementary metal oxide semiconductor (CMOS) technology (ST 65 nm) following an intra CMOS-MEMS approach. We report experimental demonstration of contact-mode nano-electromechanical switches obtaining low operating voltage (5.5 V), good ION/IOFF (103) ratio, abrupt subthreshold swing (4.3 mV/decade) and minimum dimensions (3.50 µm x 100 nm x 180 nm, and gap of 100 nm). With these dimensions, the operable Cell area of the switch will be 3.5 µm (length) x 0.2 µm (100 nm width + 100 nm gap) = 0.7 µm2 which is the smallest reported one using a top-down fabrication approach. |
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