Structurally simplified GCMO crossbar design for artificial synaptic networks
[EN]Harnessing the full power of memristors as artificial synapses demands a simple and scalable crossbar architecture enabling their seamless integration into diverse applications. This letter presents the 3 × 3 memristor crossbar array configuration featuring a grid of interconnected devices. The...
| Autores: | , , , , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión aceptada para publicación |
| Fecha de publicación: | 2024 |
| País: | España |
| Institución: | Universidad de Salamanca (USAL) |
| Repositorio: | GREDOS. Repositorio Institucional de la Universidad de Salamanca |
| OAI Identifier: | oai:gredos.usal.es:10366/159307 |
| Acceso en línea: | http://hdl.handle.net/10366/159307 |
| Access Level: | acceso abierto |
| Palabra clave: | Memristors Perovskites Resistive switching Thin film devices 2203.02 Elementos de Circuitos 3307.09 Dispositivos Fotoeléctricos |
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ES_7eef00ef8a01bab7dc282a75b5bb463d |
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oai:gredos.usal.es:10366/159307 |
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ES |
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España |
| spelling |
Structurally simplified GCMO crossbar design for artificial synaptic networks Antola, Anni Angervo, Ilari Huhtinen, Hannu Miettinen, Mikko Schulman, Alejandro Paturi, Petriina Memristors Perovskites Resistive switching Thin film devices 2203.02 Elementos de Circuitos 3307.09 Dispositivos Fotoeléctricos [EN]Harnessing the full power of memristors as artificial synapses demands a simple and scalable crossbar architecture enabling their seamless integration into diverse applications. This letter presents the 3 × 3 memristor crossbar array configuration featuring a grid of interconnected devices. The composition includes Al as the reactive top electrode connecting the device columns and Gd1−xCaxMnO3 (GCMO, x = 0.8) serving as the bottom electrode connecting the device rows as well as the memristive material eliminating the need for additional layers and fabrication steps. Controlled sized vias through insulating Al2O3 layer connect the electrodes forming the active interface. The idea is validated with a test sample of 3 × 3 crossbars with Au/GCMO/Al structure, Au enabling Ohmic contact to GCMO, with device resistive switching ratios mostly around 102 and yield of over 90%. The devised crossbar structure could provide a highly scalable, yet simple, geometry suitable for synaptic networks. American Institute of Physics (Estados Unidos) http://hdl.handle.net/10366/159307 |
| title |
Structurally simplified GCMO crossbar design for artificial synaptic networks |
| spellingShingle |
Structurally simplified GCMO crossbar design for artificial synaptic networks Antola, Anni Memristors Perovskites Resistive switching Thin film devices 2203.02 Elementos de Circuitos 3307.09 Dispositivos Fotoeléctricos |
| title_short |
Structurally simplified GCMO crossbar design for artificial synaptic networks |
| title_full |
Structurally simplified GCMO crossbar design for artificial synaptic networks |
| title_fullStr |
Structurally simplified GCMO crossbar design for artificial synaptic networks |
| title_full_unstemmed |
Structurally simplified GCMO crossbar design for artificial synaptic networks |
| title_sort |
Structurally simplified GCMO crossbar design for artificial synaptic networks |
| author |
Antola, Anni |
| author_facet |
Antola, Anni Angervo, Ilari Huhtinen, Hannu Miettinen, Mikko Schulman, Alejandro Paturi, Petriina |
| author_role |
author |
| author2 |
Angervo, Ilari Huhtinen, Hannu Miettinen, Mikko Schulman, Alejandro Paturi, Petriina |
| author2_role |
author author author author author |
| topic |
Memristors Perovskites Resistive switching Thin film devices 2203.02 Elementos de Circuitos 3307.09 Dispositivos Fotoeléctricos |
| topic_facet |
Memristors Perovskites Resistive switching Thin film devices 2203.02 Elementos de Circuitos 3307.09 Dispositivos Fotoeléctricos |
| description |
[EN]Harnessing the full power of memristors as artificial synapses demands a simple and scalable crossbar architecture enabling their seamless integration into diverse applications. This letter presents the 3 × 3 memristor crossbar array configuration featuring a grid of interconnected devices. The composition includes Al as the reactive top electrode connecting the device columns and Gd1−xCaxMnO3 (GCMO, x = 0.8) serving as the bottom electrode connecting the device rows as well as the memristive material eliminating the need for additional layers and fabrication steps. Controlled sized vias through insulating Al2O3 layer connect the electrodes forming the active interface. The idea is validated with a test sample of 3 × 3 crossbars with Au/GCMO/Al structure, Au enabling Ohmic contact to GCMO, with device resistive switching ratios mostly around 102 and yield of over 90%. The devised crossbar structure could provide a highly scalable, yet simple, geometry suitable for synaptic networks. |
| publishDate |
2024 |
| format |
article |
| status_str |
acceptedVersion |
| url |
http://hdl.handle.net/10366/159307 |
| eu_rights_str_mv |
openAccess |
| publisher |
American Institute of Physics (Estados Unidos) |
| institution |
Universidad de Salamanca (USAL) |
| collection |
GREDOS. Repositorio Institucional de la Universidad de Salamanca |
| reponame_str |
GREDOS. Repositorio Institucional de la Universidad de Salamanca |
| instname_str |
Universidad de Salamanca (USAL) |
| _version_ |
1878735550200938496 |
| publishDateSort |
2024 |
| author_browse |
Angervo, Ilari Antola, Anni Huhtinen, Hannu Miettinen, Mikko Paturi, Petriina Schulman, Alejandro |
| publisherStr |
American Institute of Physics (Estados Unidos) |
| score |
6,9008884 |