Transmission line characterization on silicon considering arbitrary distribution of the series and shunt pad parasitics

This paper presents an analytical method to simultaneously determine the complex characteristic impedance and the pad parasitics of transmission lines fabricated on silicon. The method uses experimental two-port network parameters of two lines differing in length without the need of a reflect standa...

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Detalles Bibliográficos
Autores: REYDEZEL TORRES TORRES, RAFAEL VENEGAS FERRER
Tipo de recurso: artículo
Estado:Versión aceptada para publicación
Fecha de publicación:2010
País:México
Institución:Instituto Nacional de Astrofísica, Óptica y Electrónica
Repositorio:Repositorio Institucional del INAOE
Idioma:inglés
OAI Identifier:oai:inaoe.repositorioinstitucional.mx:1009/1531
Acceso en línea:http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/1531
Access Level:acceso abierto
Palabra clave:info:eu-repo/classification/Interconnect/Interconnect
info:eu-repo/classification/De-embedding/De-embedding
info:eu-repo/classification/Transmission lines/Transmission lines
info:eu-repo/classification/Microwave measurements/Microwave measurements
info:eu-repo/classification/cti/1
info:eu-repo/classification/cti/22
info:eu-repo/classification/cti/2203
id MX_2e9d5cd9c5eaa21c36c8cffaf66bcf4e
oai_identifier_str oai:inaoe.repositorioinstitucional.mx:1009/1531
network_acronym_str MX
network_name_str México
spelling Transmission line characterization on silicon considering arbitrary distribution of the series and shunt pad parasitics REYDEZEL TORRES TORRES RAFAEL VENEGAS FERRER info:eu-repo/classification/Interconnect/Interconnect info:eu-repo/classification/De-embedding/De-embedding info:eu-repo/classification/Transmission lines/Transmission lines info:eu-repo/classification/Microwave measurements/Microwave measurements info:eu-repo/classification/cti/1 info:eu-repo/classification/cti/22 info:eu-repo/classification/cti/2203 This paper presents an analytical method to simultaneously determine the complex characteristic impedance and the pad parasitics of transmission lines fabricated on silicon. The method uses experimental two-port network parameters of two lines differing in length without the need of a reflect standard such as that required in TRL-like formulations. Furthermore, the losses associated with the silicon substrate are accurately considered using the experimentally determined complex propagation constant of the lines and three different configurations for the pad parasitics can be assumed. When using the extracted parameters in a model to represent transmission lines, excellent agreement between simulated and experimental data was achieved up to 50 GHz even for lines with lengths different to those used in the determination process. Elsevier Ltd. http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/1531
title Transmission line characterization on silicon considering arbitrary distribution of the series and shunt pad parasitics
spellingShingle Transmission line characterization on silicon considering arbitrary distribution of the series and shunt pad parasitics
REYDEZEL TORRES TORRES
info:eu-repo/classification/Interconnect/Interconnect
info:eu-repo/classification/De-embedding/De-embedding
info:eu-repo/classification/Transmission lines/Transmission lines
info:eu-repo/classification/Microwave measurements/Microwave measurements
info:eu-repo/classification/cti/1
info:eu-repo/classification/cti/22
info:eu-repo/classification/cti/2203
title_short Transmission line characterization on silicon considering arbitrary distribution of the series and shunt pad parasitics
title_full Transmission line characterization on silicon considering arbitrary distribution of the series and shunt pad parasitics
title_fullStr Transmission line characterization on silicon considering arbitrary distribution of the series and shunt pad parasitics
title_full_unstemmed Transmission line characterization on silicon considering arbitrary distribution of the series and shunt pad parasitics
title_sort Transmission line characterization on silicon considering arbitrary distribution of the series and shunt pad parasitics
author REYDEZEL TORRES TORRES
author_facet REYDEZEL TORRES TORRES
RAFAEL VENEGAS FERRER
author_role author
author2 RAFAEL VENEGAS FERRER
author2_role author
topic info:eu-repo/classification/Interconnect/Interconnect
info:eu-repo/classification/De-embedding/De-embedding
info:eu-repo/classification/Transmission lines/Transmission lines
info:eu-repo/classification/Microwave measurements/Microwave measurements
info:eu-repo/classification/cti/1
info:eu-repo/classification/cti/22
info:eu-repo/classification/cti/2203
topic_facet info:eu-repo/classification/Interconnect/Interconnect
info:eu-repo/classification/De-embedding/De-embedding
info:eu-repo/classification/Transmission lines/Transmission lines
info:eu-repo/classification/Microwave measurements/Microwave measurements
info:eu-repo/classification/cti/1
info:eu-repo/classification/cti/22
info:eu-repo/classification/cti/2203
description This paper presents an analytical method to simultaneously determine the complex characteristic impedance and the pad parasitics of transmission lines fabricated on silicon. The method uses experimental two-port network parameters of two lines differing in length without the need of a reflect standard such as that required in TRL-like formulations. Furthermore, the losses associated with the silicon substrate are accurately considered using the experimentally determined complex propagation constant of the lines and three different configurations for the pad parasitics can be assumed. When using the extracted parameters in a model to represent transmission lines, excellent agreement between simulated and experimental data was achieved up to 50 GHz even for lines with lengths different to those used in the determination process.
publishDate 2010
format article
status_str acceptedVersion
url http://inaoe.repositorioinstitucional.mx/jspui/handle/1009/1531
language eng
eu_rights_str_mv openAccess
publisher Elsevier Ltd.
institution INAOE
collection Repositorio Institucional del INAOE
reponame_str Repositorio Institucional del INAOE
instname_str Instituto Nacional de Astrofísica, Óptica y Electrónica
_version_ 1878408035160817664
publishDateSort 2010
author_browse RAFAEL VENEGAS FERRER
REYDEZEL TORRES TORRES
publisherStr Elsevier Ltd.
score 6,924472

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